Weebit demonstrates successful scaling of its ReRAM technology to 28nm

GlobeNewswire
2021-10-01

Highlights:

  • Weebit, in collaboration with its development partner CEA-Leti, demonstrates production level parameters for its 28nm ReRAM technology
  • Milestone in the production of technology for the on-board memory market
  • Weebit’s ReRAM technology can support smaller geometries used in AI, autonomous driving, 5G and advanced IoT
  • Weebit’s ReRAM is well positioned to be a key memory technology for on-board non-volatile memory for advanced process nodes where flash memory is no longer feasible

HOD HASHARON, Israel, September 30, 2021 (GLOBE NEWSWIRE) – Weebit Nano Limited (ASX: WBT), a leading developer of next-generation memory technologies for the global semiconductor industry, with its partner of CEA-Leti development, demonstrated the production level parameters of Weebit’s resistive random access memory (ReRAM) technology in a 28 nanometer (nm) process.

Demonstration of production level parameters of Weebit’s 28nm ReRAM technology is a key step towards producing integrated non-volatile memory (NVM) for applications such as AI, autonomous driving, 5G and advanced Internet of Things (IoT) processors.

Weebit and CEA-Leti, the French research institute recognized as a world leader in the field of microelectronics, jointly tested, characterized and measured 1 megabit (Mb) ReRAM functional matrices in 28 nm process technology on 300 millimeter (mm) pads, the largest diameter used in mass production and standard in advanced knots.

The 28nm ReRAM arrays are implemented using a small, energy-efficient switching device, taking full advantage of the low-power and low-voltage capabilities of the 28nm process, and allowing up to a 4-fold increase in memory density. Testing of Weebit’s single transistor and resistor (1T1R) ReRAM arrays, embedded in 28nm Fully Depleted Silicon on Insulator (FDSOI), has proven its robustness with very good endurance and very good data retention as well as other quality parameters at the production level.

This successful demonstration of reliability and robustness at 28nm strongly positions Weebit’s ReRAM technology as a key memory technology in NVM for advanced processes where it is no longer technically or economically possible to integrate flash memory technology.

Olivier Faynot, head of the silicon components division at CEA-Leti, said: “The semiconductor industry is constantly evolving towards smaller geometries for advanced processes. Since the built-in flash faces scalability challenges below 40nm, companies today are using complex and inefficient solutions to integrate it into their chips. Industry was clamoring for new technology to succeed flash memory in advanced geometries, and these results show Weebit has a viable solution.

Commenting on another key development milestone for Weebit, CEO Coby Hanoch said: “Weebit, through its close partnership with CEA-Leti, has already demonstrated the significant advantages of its ReRAM technology over larger geometries, and we have now shown that we can scale this technology successfully up to 28nm. Mark Liu, president of TSMC, the world’s largest factory, recently called 28nm “ideal for our on-board memory applications” because 28nm geometry is widely deployed in a range of applications and is considered the gateway to the most advanced process nodes.

“Given the accomplishments we have had in scaling down Weebit’s technology to date, we believe our ReRAM technology can scale to the most advanced nodes, allowing Weebit to offer a highly competitive on-board memory solution that replaces flash memory for advanced applications.

“Weebit’s first commercial agreement with SkyWater was a major milestone for the company, providing commercial validation of our innovative technology and allowing us to bring Weebit’s cutting-edge ReRAM technology to volume production at 130nm. With our ReRAM technology now reaching production level parameters at 28nm, we dramatically expand the range of potential industries and the total addressable market for Weebit’s advanced memory technology.

This announcement has been authorized for publication by the board of directors of Weebit Nano Limited.

About Weebit Nano Limited
Weebit Nano Ltd. is a leading developer of next-generation semiconductor memory technologies. The company’s revolutionary Resistive RAM (ReRAM) addresses the growing need for significantly higher performance, lower power memory solutions in a range of new electronic products such as Internet of Things (IoT) devices, smartphones, robotics, autonomous vehicles, 5G communications and artificial intelligence.

Weebit’s ReRAM enables solid-state memory elements to be significantly faster, cheaper, more reliable and more energy efficient than those using existing Flash memory solutions. Because it is based on materials that are easy to manufacture, the technology can be quickly and easily integrated into existing flows and processes, without the need for special equipment or large investments.

See: www.weebit-nano.com or follow us on https://twitter.com/WeebitNano

Weebit Nano and the Weebit Nano logo are trademarks or registered trademarks of Weebit Nano Ltd. in the United States and other countries. Other company, product and service names may be trademarks or service marks of others.

For more information, please contact:

Investors
Eric Kuret, Market Eye
Phone. : +61 417 311 335
E: [email protected]

Media – Australia
Tristan Everett, Market Eye
Phone. : +61 403 789 096
E: [email protected]

Media – United States
Jen Bernier-Santarini, Weebit Nano
Phone. : +1 650-336-4222
E: [email protected]



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